BPW 34 FS-Z OSRAM Opto Semiconductors Inc, BPW 34 FS-Z Datasheet - Page 4

• Manufacturer Part Number: BPW 34 FS-Z
• Description: Photodiodes PHOTODIODE, SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 FS-Z

• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 50 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-SMT-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Reverse
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.59A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 50uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2700

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-03-29
R
rel
rel
=
S
Ι
=
rel
=
R
100
4000
3000
2000
1000
f
50
60
70
80
90
100
pA
f
80
60
40
20
f
(
%
0
0
V
700
(λ)
(ϕ)
0
R
),
1.0
E
800
40
= 0
5
0.8
900
10
30
1000
0.6
15
nm
20
OHF00080
OHF00368
V
λ
V
R
0.4
1200
20
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
=
C
Ι
P
20
f
10
100
μ
10
10
10
10
pF
80
70
60
50
40
30
20
10
(
A
0
-1
10
V
10
3
2
1
0
R
-2
0
),
40
f
10
= 1 MHz,
10
-1
1
60
I
P
=
10
4
10
f
V
0
Ι
2
80
O
(
P
E
E
BPW 34 F, BPW 34 FS, BPW 34 FSR
e
V
),
μ
10
= 0
W/cm
O
100
1
V
=
V
OHF00081
OHF01402
OHF01097
R
E
R
2
V
e
f
= 5 V
(
10
120
10
E
2
10
10
10
10
10
mV
e
4
)
4
3
2
1
0
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
Ι
P
R
tot
=
f
10
10
10
10
10
mW
160
140
120
100
nA
f
80
60
40
20
(
-1
0
3
2
1
0
T
(
0
0
T
A
),
A
)
V
20
20
R
= 10 V,
40
40
60
60
E
= 0
80 ˚C 100
80 ˚C 100
OHF00958
OHF00082
T
T
A
A