BPW 34 FS-Z OSRAM Opto Semiconductors Inc, BPW 34 FS-Z Datasheet - Page 5

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BPW 34 FS-Z

Manufacturer Part Number
BPW 34 FS-Z
Description
Photodiodes PHOTODIODE, SMT
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BPW 34 FS-Z

Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
150 mW
Maximum Light Current
50 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-SMT-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Reverse
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.59A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
50uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2700
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-03-29
BPW 34 F
BPW 34 FS
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
0.5 (0.020)
0.3 (0.012)
Cathode marking
4.5 (0.177)
4.3 (0.169)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
0.8 (0.031)
0.6 (0.024)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
6.7 (0.264)
6.2 (0.244)
0.6 (0.024)
0.4 (0.016)
5.4 (0.213)
4.9 (0.193)
4.5 (0.177)
4.3 (0.169)
Chip position
5
1.8 (0.071)
BPW 34 F, BPW 34 FS, BPW 34 FSR
Cathode lead
0.9 (0.035)
1.1 (0.043)
0 ... 5˚
5.08 (0.200)
spacing
±0.2 (0.008)
GEOY6863
Chip position
GEOY6643

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