TPS852 Toshiba, TPS852 Datasheet - Page 2

• Manufacturer Part Number: TPS852
• Description: Photodetector Transistors Sensor Photo IC Illuminance
• Manufacturer: Toshiba
• Type: Photo IC Silicon Epitaxial Planarr

Specifications of TPS852

• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical and Optical Characteristics
Supply voltage
Supply current
Light current (1)
Light current (2)
Light current (3)
Light current ratio
Dark current
Saturation output voltage
Peak sensitivity wavelength
Switching time
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: Fluorescence light is used as light source. However, white LED is substituted in a mass-production process.
Note 4: Light current measurement circuit
Note 5: Switching time measurement method
I
L
Pulse drive
classification I
Characteristics
White LED
Rise time
Fall time
Delay time
Storage time
source
L
Light
(3) → A: 30 μA to 50 μA
TPS852
Symbol
TPS852
L I
L I
I
I
I
I
V
LEAK
L
L
L
I
V
λ p
CC
t
t
CC
t
t
(1)
(2)
(3)
(1)
d
s
O
r
(3)
f
V
CC
V
CC
Ta=25℃
V
R
V
V
V
V
V
V
I
(Ta = 25°C)
CC
CC
CC
CC
CC
CC
CC
L
L
R
= 1 kΩ
L
A
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, E
= 3.3 V, E
= 3 V, R
= 3 V, R
OUT
2
OUT
Test Condition
V
V
V
V
L
L
= 1000 lx
= 100 lx
= 10 lx
= 100 lx
V
= 150 k Ω , E
= 5 k Ω
= 0
⎯
⎯
GND
(Note 2), (Note 4)
(Note 3), (Note 4)
(Note 3), (Note 4)
V
1.5 V
OUT
I
F
V
t
d
= 100 lx
t
(Note 2)
(Note 3)
(Note 5)
r
Min
2.7
2.7
2.2
27
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
s
t
Typ.
2.35
480
600
400
250
f
4.0
1.2
⎯
48
40
⎯
11
35
90%
10%
2007-10-01
1000
2000
Max
91.8
950
5.5
5.4
1.7
0.1
54
⎯
⎯
⎯
⎯
TPS852
Unit
nm
μA
μA
μA
μA
μ A
μ s
V
V