QSD722 Fairchild Semiconductor, QSD722 Datasheet

Photodetector Transistors 0.6mA PHOTO TRANS

QSD722

Manufacturer Part Number
QSD722
Description
Photodetector Transistors 0.6mA PHOTO TRANS
Manufacturer
Fairchild Semiconductor
Type
Photo Transistorr
Datasheet

Specifications of QSD722

Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
8 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
8 us
Package / Case
TO-18
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
3.8mA
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
40deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSD722
Manufacturer:
TI
Quantity:
350
DESCRIPTION
The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.
FEATURES
• NPN Silicon Phototransistor
• Package Type: Plastic TO-18
• Matched Emitter: QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color: black epoxy
• High Sensitivity
DS300363
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
2001 Fairchild Semiconductor Corporation
unless otherwise specified.
0.800 (20.3)
0.050 (1.27)
REFERENCE
SURFACE
MIN
7/18/01
EMITTER
PACKAGE DIMENSIONS
45°
45°
0.020 (0.51) RADIUS
0.100 (2.54) NOM
0.235 (5.97)
0.218 (5.54)
0.215 (5.46) NOM
0.190 (4.83)
0.178 (4.52)
COLLECTOR
0.020 (0.51)
SQ 2PLCS
0.030 (0.76)
QSD722
1 OF 4
INFRARED PHOTOTRANSISTOR
QSD723
PLASTIC SILICON
SCHEMATIC
COLLECTOR
EMITTER
www.fairchildsemi.com
QSD724

Related parts for QSD722

QSD722 Summary of contents

Page 1

... Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES • NPN Silicon Phototransistor • Package Type: Plastic TO-18 • Matched Emitter: QED523 • ...

Page 2

... ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown (5) On-State Collector Current QSD722 QSD723 QSD724 (5) Saturation Voltage Rise Time Fall Time www.fairchildsemi.com INFRARED PHOTOTRANSISTOR QSD722 (T = 25°C unless otherwise specified) A Symbol T OPR T STG T SOL-I T SOL ...

Page 3

... CE GaAs Light Source 0 Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage Collector-Emitter Voltage (V) CE DS300363 7/18/01 INFRARED PHOTOTRANSISTOR QSD722 140 150 160 170 180 1.0 0 Figure 4. Light Current vs. Collector - Emitter Voltage 0.1 Figure 5. Dark Current vs. Ambient Temperature 4 10 Normalized to: ...

Page 4

... PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness ...

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