QSD722 Fairchild Semiconductor, QSD722 Datasheet - Page 2

• Manufacturer Part Number: QSD722
• Description: Photodetector Transistors 0.6mA PHOTO TRANS
• Manufacturer: Fairchild Semiconductor
• Type: Photo Transistorr

Specifications of QSD722

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 8 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 3.8mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 40deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
5. ! = 880 nm, AlGaAs.
www.fairchildsemi.com
PARAMETER
Peak Sensitivity Wavelength
Reception Angle
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
QSD722
QSD723
QSD724
1/16”
(5)
(1)
(1.6mm) minimum from housing.
Parameter
(5)
(2,3,4)
(2,3)
V
Ee = 0.5 mW/cm
Ee = 0.5 mW/cm
CC
= 5 V, R
V
TEST CONDITIONS
CE
I
= 10 V, Ee = 0
E
(T
I
L
C
= 100 µA
= 100 , I
A
= 1 mA
= 25°C unless otherwise specified)
2
, I
2
, V
C
= 0.6 mA
C
CE
= 0.2 mA
Symbol
= 5 V
QSD722
T
T
2 OF 4
T
INFRARED PHOTOTRANSISTOR
T
V
V
SOL-F
SOL-I
P
OPR
STG
CE
EC
D
(T
A
=25°C)
SYMBOL
V
BV
BV
I
I
C(ON)
CE(sat)
!
CEO
"
t
t
PS
CEO
ECO
r
f
260 for 10 sec
240 for 5 sec
QSD723
-40 to +100
-40 to +100
MIN
0.6
2.5
3.5
30
—
—
—
—
—
—
5
Rating
100
30
5
PLASTIC SILICON
TYP
880
±20
0.4
—
—
—
—
—
—
8
8
QSD724
7/18/01
MAX
10.0
100
3.8
—
—
—
—
—
—
—
—
Unit
mW
°C
°C
°C
°C
V
V
DS300363
UNITS
Deg.
nm
mA
nA
µs
V
V
V