SI4178DY-T1-E3 Vishay, SI4178DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4178DY-T1-E3
• Description: MOSFET N-CH 30V 12A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4178DY-T1-E3

• Input Capacitance (ciss) @ Vds: 405pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 8.4 A
GS
5
0.5
On-Resistance vs. Drain Current
= 4.5 V
V
DS
Output Characteristics
10
2
Q
- Drain-to-Source Voltage (V)
g
1.0
V
- Total Gate Charge (nC)
I
GS
V
D
15
Gate Charge
DS
- Drain Current (A)
= 10 V thru 6 V
= 7.5 V
V
1.5
20
DS
4
= 15 V
25
2.0
V
V
GS
DS
V
30
6
V
= 3 V
GS
= 24 V
V
GS
GS
2.5
= 5 V
= 10 V
= 4 V
35
3.0
40
8
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
5
1
V
V
DS
GS
Transfer Characteristics
C
C
T
0
J
iss
rss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
Capacitance
C
25
V
= 125 °C
2
C
GS
oss
= 10 V; I
T
15
50
C
Vishay Siliconix
= 25 °C
V
GS
3
D
75
= 4.5 V; I
Si4178DY
= 8.4 A
20
www.vishay.com
100
T
C
4
D
= - 55 °C
25
= 8.4 A
125
150
30
5
3