SI4178DY-T1-E3 Vishay, SI4178DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4178DY-T1-E3
• Description: MOSFET N-CH 30V 12A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4178DY-T1-E3

• Input Capacitance (ciss) @ Vds: 405pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65718.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.1
0.05
0.2
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.02
10
-3
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S10-0212-Rev. A, 25-Jan-10
= P
t
2
Document Number: 65718
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 85 °C/W
1000
1
0