SI3493DV-T1-E3 Vishay, SI3493DV-T1-E3 Datasheet
SI3493DV-T1-E3
Specifications of SI3493DV-T1-E3
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SI3493DV-T1-E3 Summary of contents
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... GS 0.048 1 TSOP-6 Top View 2.85 mm Ordering Information: Si3493DV-T1-E3 (Lead (Pb)-free) Si3493DV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si3493DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71936 S09-2276-Rev. D, 02-Nov-09 3000 2500 2000 1500 V = 2.5 V 1000 4 °C J 0.8 1.0 1.2 Si3493DV Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 0 ...
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... Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) 1 Limited ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71936. Document Number: 71936 S09-2276-Rev. D, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3493DV Vishay Siliconix - 1 1 www.vishay.com 10 5 ...
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