SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 5

• Manufacturer Part Number: SUD50N03-16P-E3
• Description: MOSFET N-CH D-S 30V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N03-16P-E3

• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Power - Max: 40.8W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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