4N29S Fairchild Semiconductor, 4N29S Datasheet - Page 3

• Manufacturer Part Number: 4N29S
• Description: Transistor Output Optocouplers SO-6 PHOTO DARL
• Manufacturer: Fairchild Semiconductor

Specifications of 4N29S

• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 3 V
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
EMITTER
DETECTOR
DC CHARACTERISTICS
AC CHARACTERISTICS
Symbol
BV
BV
BV
Symbol
V
I
I
C(CTR)
CEO
CE(SAT)
V
I
C
BW
CEO
CBO
ECO
R
t
t
F
on
off
Input Forward Voltage*
Reverse Leakage Current*
Capacitance*
Collector-Emitter Breakdown Voltage* I
Collector-Base Breakdown Voltage*
Emitter-Collector Breakdown Voltage* I
Collector-Emitter Dark Current*
Collector Output Current*
Saturation Voltage*
Turn-on Time
Turn-off Time
Bandwidth
Parameter
Parameter
(3, 4)
(2)
(T
(1, 2)
A
= 25°C Unless otherwise specified.)
I
I
I
I
I
I
I
V
I
R
I
V
I
R
F
B
F
F
F
F
F
F
F
F
CC
CC
L
L
= 10mA, V
= 1mA, V
= 10mA, V
= 8mA, I
= 1mA, I
= 200mA, I
= 10mA, V
= 200mA, I
= 10mA, V
= 0
Test Conditions
= 100
= 100
I
V
V
V
I
V
= 10V, R
= 10V, R
F
C
C
E
R
R
F
CE
= 10mA
Test Conditions
= 1.0mA, I
= 100µA, I
= 100µA, I
= 0V, f = 1.0MHz
= 3.0V
= 6.0V
= 10V, Base Open
C
C
CE
= 2.0mA
= 1mA
CE
CE
CE
CE
C
C
L
L
3
= 5V
= 100
= 100
= 50mA,
= 50mA,
= 10V,
= 1V
= 10V,
= 10V,
B
B
E
= 0
= 0
= 0
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
TIL113M
H11B1M
TIL113M
H11B1M
4NXXM,
Device
4N32M,
4N33M,
4N29M,
4N32M,
4N33M
4N30M
4N30M
4N29M,
H11B1M,
H11B1M,
H11B1M,
TIL113M
TIL113M
TIL113M
TIL113M
H11B1M
4NXXM,
Device
4NXXM
4NXXM
4NXXM
All
All
All
50 (500)
10 (100)
30 (300)
5 (500)
Min.
Min.
0.8
5.0
30
25
30
7
Typ.
0.001
0.001
Typ.
25
18
30
150
100
1.2
1.2
60
60
10
10
1
Max.
Max.
1.25
100
1.0
1.0
5.0
100
100
40
1.5
1.5
10
www.fairchildsemi.com
mA (%)
Unit
Unit
kHz
µA
pF
nA
µs
µs
V
V
V
V
V