4N29S Fairchild Semiconductor, 4N29S Datasheet - Page 5

• Manufacturer Part Number: 4N29S
• Description: Transistor Output Optocouplers SO-6 PHOTO DARL
• Manufacturer: Fairchild Semiconductor

Specifications of 4N29S

• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 3 V
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
Typical Performance Curves
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
-60
1
Fig. 3 Normalized CTR vs. Ambient Temperature
Fig. 1 LED Forward Voltage vs. Forward Current
-40
Normalized to
I
T
F
A
= 10 mA
= 25 C
Fig. 5 CTR vs. RBE (Saturated)
I
F
T
-20
A
- LED FORWARD CURRENT (mA)
- AMBIENT TEMPERATURE ( C)
R
BE
- BASE RESISTANCE (k
I
F
0
= 20 mA
I
F
= 10 mA
100
20
10
T
T
T
I
A
A
A
F
= -55 C
= 25 C
= 100 C
= 5 mA
I
I
I
F
F
F
= 10 mA
= 5 mA
= 20 mA
40
60
V
CE
= 0.3 V
80
1000
100
100
5
0.001
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
0.1
10
1
0.01
10
0
I
T
F
V
T
A
A
= 20 mA
CE
Fig. 6 Collector-Emitter Saturation Voltage
= 25˚C
Fig. 2 Normalized CTR vs. Forward Current
= 25 C
2
= 5.0V
I
F
= 5 mA
I
F
4
Fig. 4 CTR vs. RBE (Unsaturated)
= 10 mA
I
C
- COLLECTOR CURRENT (mA)
I
I
R
vs. Collector Current
F
F
6
BE
= 2.5 mA
- FORWARD CURRENT (mA)
0.1
- BASE RESISTANCE (k
8
I
F
= 10 mA
100
10
I
F
V
= 5 mA
CE
12
= 5.0 V
I
F
1
= 20 mA
14
Normalized to
I
F
= 10 mA
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16
18
1000
10
20