2ED300E17-S Infineon Technologies, 2ED300E17-S Datasheet - Page 7

Power Management Modules & Development Tools DUAL CH EVAL BD IGBT DRV 2ED300C17-S

2ED300E17-S

Manufacturer Part Number
2ED300E17-S
Description
Power Management Modules & Development Tools DUAL CH EVAL BD IGBT DRV 2ED300C17-S
Manufacturer
Infineon Technologies
Type
MOSFET & Power Driverr
Datasheet

Specifications of 2ED300E17-S

Input Voltage
1700 V
Board Size
125 mm x 70 mm
Product
Power Management Modules
Dimensions
125 mm x 70 mm
For Use With/related Products
2ED300C17-S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate resistors as well as gate-emitter clamping should be placed in closest vicinity to the IGBT module.
It is equally important to place the collector diodes appropriately. Make sure to be aware of the possible high
voltages.
Should an “Active Clamping“ as in the datasheet of the 2ED300C17-S chapter 3.10 be used, the sense input
is to be utilised.
The plug used for X2 is a “Molex“- type
www.eupec.com
IGBT connection :
EiceDRIVER
EiceDRIVER
Technische Information / Technical Information
www.EiceDRIVER.com
2ED300E17-S
X2:
1=V
2=Gate A
3=COM A
4= Sense A
5=
6=
7=
8=
9=
10=V
11=Gate B
12=COM B
13= Sense B
D
CE sat
CE sat
R
D
A
R
R
R
GB
B
GA
2x UF4007
GE
A
GE
B
2x UF4007
Seite/Page 7

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