LCMXO2280C-M-EVN Lattice, LCMXO2280C-M-EVN Datasheet - Page 20

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LCMXO2280C-M-EVN

Manufacturer Part Number
LCMXO2280C-M-EVN
Description
Microcontroller Modules & Accessories MachXO Mini Dev Kit
Manufacturer
Lattice
Series
MachXOr
Type
PLDr

Specifications of LCMXO2280C-M-EVN

Silicon Manufacturer
Lattice
Silicon Core Number
LCMXO2280C-4TN144C
Silicon Family Name
MachXO
Rohs Compliant
Yes
Contents
Board, Cables, Documentation
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
LCMXO2280C-3FTN256C
Lattice Semiconductor
Figure 2-12. MachXO2 Input Register Block Diagram (PIO on Left, Top and Bottom Edges)
Right Edge
The input register block on the right edge is a superset of the same block on the top, bottom, and left edges. In
addition to the modes described above, the input register block on the right edge also supports DDR memory
mode.
In DDR memory mode, two registers are used to sample the data on the positive and negative edges of the modi-
fied DQS (DQSR90) in the DDR Memory mode creating two data streams. Before entering the core, these two data
streams are synchronized to the system clock to generate two data streams.
The signal DDRCLKPOL controls the polarity of the clock used in the synchronization registers. It ensures ade-
quate timing when data is transferred to the system clock domain from the DQS domain. The DQSR90 and
DDRCLKPOL signals are generated in the DQS read-write block.
Figure 2-13. MachXO2 Input Register Block Diagram (PIO on Right Edge)
Output Register Block
The output register block registers signals from the core of the device before they are passed to the sysIO buffers.
Left, Top, Bottom Edges
In SDR mode, D0 feeds one of the flip-flops that then feeds the output. The flip-flop can be configured as a D-type
register or latch.
DQSR90
SCLK
D
SCLK
D
Programmable
Delay Cell
Programmable
Delay Cell
D
DDRCLKPOL
Q
Q0
D
D
Q
Q
D
Q0
Q1
2-16
Q
Q1
D
D
Q
Q
S1
S0
D
D
MachXO2 Family Data Sheet
Q
Q
D/L Q
D
Q
INDD
INCK
D/L Q
D
Q
INCK
INDD
Q1
Q0
Architecture
Q1
Q0

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