TGA8310-SCC TriQuint, TGA8310-SCC Datasheet - Page 3

• Manufacturer Part Number: TGA8310-SCC
• Description: Wireless Accessories 2.0-20GHz LNA AGC
• Manufacturer: TriQuint

Specifications of TGA8310-SCC

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004329

I
G
V
V
V
DSS
TriQuint Semiconductor Texas Phone : [phone]
m
P
BVGD
BVGS
: Pinch-Off Voltage; V
: Transconductance;
: Maximum drain current (I
gate width.
(V
: Breakdown Voltage, Gate-to-Source; gate-to-
: Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (I
of gate width.
source breakdown current (I
of gate width.
GS
) at zero volts.
AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS
FET Parameters
I
DSS
GS
VG1
for I
IDS 1
DS
DS
) with gate voltage
BD
= 0.5 mA/mm of
BS
) = 1.0 mA/mm
) = 1.0 mA/mm
TABLE III
V
up to a maximum of 3.5 V in search of the maximum
value of I
For all material types, V
and VDSP in search of the maximum value of I
This maximum I
Intermediate and Power material, IDS1 is measured
at V
pHEMT material, V
LNBECOLC, use V
V
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
GS
DS
GS
= 0.0 V, drain voltage (V
fixed at 2.0 V, V
= VG1 = -0.5 V. For Low Noise, HFET and
Fax: [phone] Web: www.triquint.com
DS
GD
; voltage for I
) measured is V
DS
GS
Test Conditions
is recorded as IDS1. For
) measured is V
GS
GS
Product Data Sheet
GS
= VG1 = -0.10 V.
= VG1 = -0.25 V. For
is swept to bring I
DS
DSS
is swept between 0.5 V
is recorded as VDSP.
BDGD
DS
) is swept from 0.5 V
and recorded as
BDGS
and recorded
DS
TGA8310-SCC
to
June 12, 2002
ds
.
3