CMPTA14E Central Semiconductor, CMPTA14E Datasheet

Darlington Transistors NPN Enhanced Darlington

CMPTA14E

Manufacturer Part Number

CMPTA14E

Description

Darlington Transistors NPN Enhanced Darlington

Manufacturer

Central Semiconductor

Datasheet

1.CMPT2907AE.pdf (2 pages)

Specifications of CMPTA14E

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Package / Case

SOT-23

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

10 V

Collector- Base Voltage Vcbo

40 V

Maximum Dc Collector Current

0.5 A

Maximum Collector Cut-off Current

0.1 uA

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

0.45 A

Dc Collector/base Gain Hfe Min

30000

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CMPTA14ETR

Manufacturer:

Central

Quantity:

18 000

Current page: 1 of 2
Download datasheet (331Kb)

♦

MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

I CEV

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

f T

C ob

C ib

♦ Enhanced specification

ENHANCED SPECIFICATION

NPN SILICON TRANSISTOR

SURFACE MOUNT

TEST CONDITIONS

V CB =60V

V CB =60V, T A =125°C

V CE =60V, V EB =3.0V

V EB =3.0V

I C =10µA

I C =10mA

I E =10μA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

V CE =10V, I C =0.1mA

V CE =10V, I C =1.0mA

V CE =10V, I C =10mA

V CE =1.0V, I C =150mA

V CE =10V, I C =150mA

V CE =10V, I C =500mA

V CE =20V, I C =20mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

V BE =0.5V, I C =0, f=1.0MHz

SOT-23 CASE

CMPT2222AE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2222AE

is an Enhanced version of the CMPT2222A NPN

Switching transistor in a SOT-23 surface mount

package, designed for switching applications, interface

circuit and driver circuit applications.

MARKING CODE: C1PE

FEATURED ENHANCED SPECIFICATIONS:

♦

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JA

MIN

100

300

P D

6.0

0.6

I C

CBO

from 40 to 60 min. (130 TYP)

from 1.0V max to 0.5V max. (0.12V TYP)

from 75V min to 100V min. (145V TYP)

TYP

0.92

0.12

145

210

205

150

130

-65 to +150

100

600

350

357

6.0

MAX

0.15

0.50

300

1.2

2.0

8.0

w w w. c e n t r a l s e m i . c o m

R2 (1-February 2010)

UNITS

°C/W

MHz

°C

μA

Related parts for CMPTA14E

CMPTA14E Summary of contents

Page 1

... V CB =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz ♦ Enhanced specification DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ ...

Page 2

CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz h ...

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