CMPTA14E Central Semiconductor, CMPTA14E Datasheet - Page 2

• Manufacturer Part Number: CMPTA14E
• Description: Darlington Transistors NPN Enhanced Darlington
• Manufacturer: Central Semiconductor

Specifications of CMPTA14E

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.45 A
• Dc Collector/base Gain Hfe Min: 30000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

w w w. c e n t r a l s e m i . c o m
ELECTRICAL CHARACTERISTICS - Continued: (T A =25°C unless otherwise noted)
SYMBOL
h ie
h ie
h re
h re
h fe
h fe
h oe
h oe
rb’C c
NF
t d
t r
t s
t f
ENHANCED SPECIFICATION
NPN SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CE =10V, I C =1.0mA, f=1.0kHz
V CE =10V, I C =10mA, f=1.0kHz
V CE =10V, I C =1.0mA, f=1.0kHz
V CE =10V, I C =10mA, f=1.0kHz
V CE =10V, I C =1.0mA, f=1.0kHz
V CE =10V, I C =10mA, f=1.0kHz
V CE =10V, I C =1.0mA, f=1.0kHz
V CE =10V, I C =10mA, f=1.0kHz
V CB =10V, I E =20mA, f=31.8MHz
V CE =10V,I C =100μA, R S =1.0KΩ, f=1.0kHz
V CC =30V, V BE =0.5V, I C =150mA, I B1 =15mA
V CC =30V, V BE =0.5V, I C =150mA, I B1 =15mA
V CC =30V, I C =150mA, I B1 =I B2 =15mA
V CC =30V, I C =150mA, I B1 =I B2 =15mA
CMPT2222AE
SOT-23 CASE - MECHANICAL OUTLINE
0.25
MIN
2.0
5.0
50
75
25
MAX
1.25
300
375
200
150
225
8.0
8.0
4.0
4.0
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C1PE
35
10
25
60
UNITS
X10
X10
kΩ
kΩ
μS
μS
dB
ps
ns
ns
ns
ns
R2 (1-February 2010)
-4
-4