2N6039 ON Semiconductor, 2N6039 Datasheet - Page 4

Darlington Transistors 4A 80V Bipolar

2N6039

Manufacturer Part Number
2N6039
Description
Darlington Transistors 4A 80V Bipolar
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N6039

Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-225-3
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
4 A
Maximum Collector Cut-off Current
500 uA
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
100, 500, 750
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6039
Manufacturer:
ON
Quantity:
1 350
Part Number:
2N6039
Manufacturer:
ST
0
Part Number:
2N60398
Manufacturer:
ST
0
Part Number:
2N6039G
Manufacturer:
ON
Quantity:
500
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.7
C
There are two limitations on the power handling ability of
The data of Figures 4 and 5 is based on T
1.0
7.0
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
is variable depending on conditions. Second breakdown
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
5.0
0.04
PNP
2N6034, 2N6035, 2N6036
0.06
7.0
J(pk)
V
CE
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
may be calculated from the data in Figure 3.
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
J
10
= 150°C
Figure 4. 2N6035, 2N6036
C
T
= 25°C (SINGLE PULSE)
I
dc
C
C
, COLLECTOR CURRENT (AMP)
= 125°C
0.2
1.0 ms
25°C
20
0.4
2N6036
2N6035
- 55°C
ACTIVE−REGION SAFE−OPERATING AREA
30
0.6
1.0
100 ms
J(pk)
50
V
Figure 7. DC Current Gain
CE
= 150_C;
C
2.0
70
= 3.0 V
http://onsemi.com
− V
J(pk)
CE
100
4.0
4
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
200
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0.04
0.04
5.0
NPN
2N6038, 2N6039
0.06 0.1
0.06
7.0
V
T
CE
J
0.1
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
= 125°C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
0.2
10
PNP
NPN
Figure 5. 2N6038, 2N6039
= 150°C
C
I
V
C
= 25°C (SINGLE PULSE)
R
dc
, COLLECTOR CURRENT (AMP)
Figure 6. Capacitance
, REVERSE VOLTAGE (VOLTS)
0.4 0.6 1.0
0.2
- 55°C
25°C
20
0.4
C
1.0 ms
2N6039
2N6038
ib
2.0
0.6
30
4.0
T
C
1.0
6.0 10
= 25°C
100 ms
50
V
CE
2.0
= 3.0 V
C
70
ob
20
100
4.0
40

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