RN4991FS(TPL3) Toshiba, RN4991FS(TPL3) Datasheet

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RN4991FS(TPL3)

Manufacturer Part Number
RN4991FS(TPL3)
Description
Digital Transistors 50mA 20volts 6Pin 10Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN4991FS(TPL3)

Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Continuous Collector Current
50 mA / - 50 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Equivalent
Marking
• Two devices are incorporated into a fine pitch small mold (6-pin)
• Incorporating a bias resistor into a transistor reduces parts count.
R1: 10kΩ
(Q1, Q2 common)
Q1
B
package.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
R1
Q1
C
E
6
1
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
Circuit
5
2
Q2
(PCT process) (Bias Resistor Built-in Transistor)
B
4
3
Q2
R1
RN4991FS
C
E
(top
1
view)
WF
Weight: 0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLEECTOR1
1
3
2
Type name
1.0±0.05
0.8±0.05
RN4991FS
2-1F1D
2004-06-30
4
6
5
Unit: mm
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
0.1±0.05

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RN4991FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

Maximum Ratings (Ta = 25°C) (Q1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q2) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector ...

Page 3

Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation ...

Page 4

VI(ON) 100 Ta=100° -25 EMITTER COMMON VCE=0.2V 0.1 0 INPUT VOLTAGE VI(ON) (V) hFE - IC 1000 Ta=100°C -25 100 EMITTER COMMON VCE= COLLECTOR CURRENT IC (mA) 10000 ...

Page 5

VI(ON) -100 Ta=100°C - -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 INPUT ON VOLTAGE VI(ON hFE - IC 10000 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 COLLECTOR CURRENT IC (mA) ...

Page 6

HANDLING PRECAUTION When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact ...

Page 7

... It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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