RN2972FS(TPL3) Toshiba, RN2972FS(TPL3) Datasheet

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RN2972FS(TPL3)

Manufacturer Part Number
RN2972FS(TPL3)
Description
Digital Transistors -50mA -20volts 6Pin 22Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN2972FS(TPL3)

Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
fS-6
Continuous Collector Current
- 50 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
Electrical Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
Note: Total rating
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1972FS, RN1973FS
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
B
Characteristics
R1
Characteristics
C
E
RN2972FS, RN2973FS
(Ta = 25°C) (Q1, Q2 common)
RN2972FS
RN2973FS
(Ta = 25°C) (Q1, Q2 common)
Symbol
V
V
V
P
T
CBO
CEO
EBO
C
I
T
stg
C
j
(Note)
V
Symbol
CE (sat)
I
I
C
CBO
EBO
h
R1
FE
ob
−55~150
Rating
V
V
V
I
V
−20
−20
−50
150
C
−5
50
CB
EB
CE
CB
= −5 mA, I
1
= −20 V, I
= −5 V, I
= −5 V, I
= −10 V, I
Test Condition
B
C
C
E
E
Unit
mW
= −0.25 mA
mA
= 0
°C
= −1 mA
°C
V
V
V
= 0
= 0, f = 1 MHz
RN2972FS, RN2973FS
Weight: 0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
Equivalent Circuit
(top view)
0.1±0.05
17.6
37.6
Min
300
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
Q1
6
1
1
3
2
Typ.
1.2
22
47
1.0±0.05
0.8±0.05
5
2
2-1F1C
2004-06-30
Q2
−0.15
−100
−100
Max
26.4
56.4
4
3
4
6
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
5
Unit: mm
0.1±0.05
Unit
kΩ
nA
nA
pF
V

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RN2972FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2972FS, RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

RN2972FS IC - VI(ON) -100 Ta=100°C - -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 -10 INPUT ON VOLTAGE VI(ON VI(ON) RN2973FS -100 Ta=100°C - -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 -10 ...

Page 3

IC RN2972FS 10000 Ta=100°C 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 COLLECTOR CURRENT IC (mA) hFE - IC RN2973FS 10000 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 COLLECTOR CURRENT IC ...

Page 4

Type Name 6 RN2972FS 1 6 RN2973FS 1 HANDLING PRECAUTION When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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