RN4983FS(TPL3) Toshiba, RN4983FS(TPL3) Datasheet

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RN4983FS(TPL3)

Manufacturer Part Number
RN4983FS(TPL3)
Description
Digital Transistors 50mA 20volts 6Pin 22K x 22Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN4983FS(TPL3)

Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
fS-6
Continuous Collector Current
50 mA, - 50 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
R1: 22 kΩ
R2: 22 kΩ
(Q1, Q2 common)
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Q1
Q1
B
6
1
5
2
R1
4
3
Q2
C
E
(top view)
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
Q2
(PCT process) (Bias Resistor Built-in Transistor)
B
R1
RN4983FS
C
E
Marking
1
W2
Type name
Weight: 0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
1
3
2
1.0±0.05
0.8±0.05
RN4983FS
2-1F1D
2004-06-30
4
6
5
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Unit: mm
0.1±0.05

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RN4983FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

Maximum Ratings (Ta =25°C) (Q1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q2) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector power ...

Page 3

Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Collector output capacitance Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Collector cut-off current Emitter cut-off ...

Page 4

VI(ON) 100 Ta=100° -25 COMMON EMITTER VCE=0.2V 0.1 0.1 1 INPUT VOLTAGE VI(ON) (V) hFE - IC 1000 Ta=100°C 100 -25 COMMON EMITTER VCE = COLLECTOR CURRENT IC (mA) 10000 ...

Page 5

VI(ON) -100 -10 Ta=100° -25 EMMITER COMMON VCE= -0.2V -0.1 -0.1 -1 -10 INPUT VOLTAGE VI(ON hFE - IC 1000 Ta=100°C 100 -25 EMITTER COMMON VCE= - -10 COLLECTOR CURRENT IC (mA) ...

Page 6

HANDLING PRECAUTION When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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