MUN5231T1 ON Semiconductor, MUN5231T1 Datasheet

MUN5231T1

Manufacturer Part Number

MUN5231T1

Description

Digital Transistors 100mA 50V BRT NPN

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.MUN5213T1.pdf (16 pages)

Specifications of MUN5231T1

Configuration

Single

Transistor Polarity

NPN

Typical Input Resistor

2.2 KOhms

Typical Resistor Ratio

Mounting Style

SMD/SMT

Package / Case

SC-70-3

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

100 mA

Peak Dc Collector Current

100 mA

Power Dissipation

202 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Transistor Type

NPN - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

2.2K

Resistor - Emitter Base (r2) (ohms)

2.2K

Dc Current Gain (hfe) (min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (max)

500nA

Frequency - Transition

Power - Max

202mW

Mounting Type

Surface Mount

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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MUN5211T1G Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base- -emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC- -70/SOT- -323 package which is designed for low power

surface mount applications.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR--4 @ Minimum Pad.

2. FR--4 @ 1.0 x 1.0 inch Pad.

MAXIMUM RATINGS

 Semiconductor Components Industries, LLC, 2010

October, 2010 - - Rev. 9

THERMAL CHARACTERISTICS

Collector--Base Voltage

Collector--Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25C

Thermal Resistance, Junction--to--Ambient

Thermal Resistance, Junction--to--Lead

Junction and Storage Temperature

Range

This new series of digital transistors is designed to replace a single

The modified gull- -winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

to order the 7 inch/3000 unit reel.

Compliant

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SC- -70/SOT- -323 package can be soldered using wave or reflow.

Available in 8 mm embossed tape and reel. Use the Device Number

These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS

Characteristic

= 25C

Rating

= 25C unless otherwise noted)

Symbol

CBO

CEO

, T

θJA

θJL

stg

202 (Note 1)

310 (Note 2)

618 (Note 1)

403 (Note 2)

280 (Note 1)

332 (Note 2)

-- 55 to +150

1.6 (Note 1)

2.5 (Note 2)

Value

Max

100

mW/C

mAdc

C/W

Unit

Vdc

C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

See specific marking information in the device marking table

on page 2 of this data sheet.

(INPUT)

*Date Code orientation may vary depending

(Note: Microdot may be in either location)

upon manufacturing location.

DEVICE MARKING INFORMATION

BASE

PIN 1

ORDERING INFORMATION

BIAS RESISTOR

MARKING DIAGRAM

TRANSISTORS

http://onsemi.com

NPN SILICON

= Device Code

= Date Code*

= Pb--Free Package

8x M G

Publication Order Number:

SC- -70/SOT- -323

CASE 419

STYLE 3

PIN 2

EMITTER

(GROUND)

PIN 3

COLLECTOR

(OUTPUT)

MUN5211T1/D

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MUN5231T1 Summary of contents

Page 1

... Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base- -emitter resistor ...

Page 2

... MUN5214T1G SC--70/SOT--323 (Pb--Free) MUN5215T1G SC--70/SOT--323 (Pb--Free) MUN5216T1G (Note 3) SC--70/SOT--323 (Pb--Free) MUN5230T1G SC--70/SOT--323 (Pb--Free) MUN5231T1G (Note 3) SC--70/SOT--323 (Pb--Free) MUN5232T1G SC--70/SOT--323 (Pb--Free) MUN5233T1G SC--70/SOT--323 (Pb--Free) MUN5234T1G (Note 3) SC--70/SOT--323 (Pb--Free) MUN5235T1G ...

Page 3

... MUN5211T1G h FE MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G V CE(sat) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5236T1G MUN5230T1G MUN5231T1G MUN5237T1G MUN5215T1G MUN5216T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G http://onsemi.com 3 Min Typ Max -- -- 100 nAdc -- -- 500 nAdc -- -- 0.5 mAdc ...

Page 4

... MUN5232T1G MUN5233T1G MUN5236T1G MUN5237T1G R 1 MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G http://onsemi.com 4 Min Typ Max -- -- ...

Page 5

R = 403C/W 50 θ AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve http://onsemi.com 5 100 150 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5211T1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5212T1G --25C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5213T1G --25C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 0 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5214T1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 0 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G 0.1 --25C 25C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G 0.1 --25C 25C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G 75C 0.1 --25C 25C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233T1G 0.1 --25C 25C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G 0.1 --25C 25C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 15

TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 47. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 48. Open Collector Inverter: Inverts the Input Signal Figure 49. Inexpensive, ...

Page 16

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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