MUN5231T1 ON Semiconductor, MUN5231T1 Datasheet - Page 12

• Manufacturer Part Number: MUN5231T1
• Description: Digital Transistors 100mA 50V BRT NPN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MUN5231T1

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-70-3
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 100 mA
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 202 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
6
5
4
3
2
1
0
0.1
0
1
0
5
I
C
--25C
/I
V
B
R
10
Figure 34. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 32. V
15
, COLLECTOR CURRENT (mA)
25C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G
20
20
75C
25
0.1
CE(sat)
10
1
0
Figure 36. Input Voltage versus Output Current
30
T
30
75C
A
versus I
= --25C
35
10
I
f = 1 MHz
I
T
C
E
40
25C
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25C
http://onsemi.com
45
20
50
50
12
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 35. Output Current versus Input Voltage
75C
V
1
O
= 0.2 V
40
T
2
A
Figure 33. DC Current Gain
I
= --25C
C
V
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
25C
3
A
= --25C
50
4
5
10
75C
25C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10