MMBTA92 T/R NXP Semiconductors, MMBTA92 T/R Datasheet - Page 2

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MMBTA92 T/R

Manufacturer Part Number
MMBTA92 T/R
Description
Digital Transistors TRANS SW TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBTA92 T/R

Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Maximum Operating Frequency
50 MHz
Collector- Emitter Voltage Vceo Max
300 V
Continuous Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBTA92,215
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: MMBTA42.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
MMBTA92
MMBTA92
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
Low current (max. 100 mA)
High voltage (max. 300 V).
Telephony
Professional communication equipment.
CBO
CEO
EBO
tot
PNP high-voltage transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
7E*
(1)
open emitter
open base
open collector
T
amb
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
CONDITIONS
25 C; note 1
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
1
2
3
1
3
65
65
MIN.
base
emitter
collector
2
MAM256
Product specification
DESCRIPTION
250
+150
150
+150
300
300
5
100
200
100
MAX.
MMBTA92
1
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
C
C
C
UNIT

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