PDTA114YE T/R NXP Semiconductors, PDTA114YE T/R Datasheet - Page 2

Digital Transistors PNP W/RES 50V

PDTA114YE T/R

Manufacturer Part Number
PDTA114YE T/R
Description
Digital Transistors PNP W/RES 50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA114YE T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.213
Mounting Style
SMD/SMT
Package / Case
SOT-416-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTA114YE,115
NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 02
PDTA114YE
PDTA114YEF
PDTA114YK
PDTA114YM
PDTA114YS
PDTA114YT
PDTA114YU
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TA114Y
*29
*55
DF
36
37
54
(1)
(1)
PDTA114Y series
PDTC114YE
PDTC114YEF
PDTC114YK
PDTC114YM
PDTC114YS
PDTC114YT
PDTC114YU
10
47
NPN COMPLEMENT
TYP.
Product data sheet
−50
−100
MAX.
V
mA
UNIT

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