PUMB30 T/R NXP Semiconductors, PUMB30 T/R Datasheet - Page 4

• Manufacturer Part Number: PUMB30 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PUMB30 T/R

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Mounting Style: SMD/SMT
• Package / Case: UMT-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PUMB30,115

NXP Semiconductors
7. Characteristics
PEMB30_PUMB30_2
Product data sheet
Fig 1.
h
(1) T
(2) T
(3) T
FE
500
400
300
200
100
0
10
V
DC current gain as a function of collector
current; typical values
CE
amb
amb
amb
1
= 5 V
= 100 C
= 25 C
= 40 C
1
Table 8.
T
(1)
(2)
(3)
Symbol
Per transistor
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
Characteristics
10
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
I
C
006aaa691
(mA)
Rev. 02 — 2 September 2009
10
2
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
Fig 2.
= 150 C
= 10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 10 V; I
V
CEsat
(V)
10
10
(1) T
(2) T
(3) T
1
1
2
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
/I
1
C
C
B
B
E
B
B
E
= 0 A
= 20 mA
= 20
= 100 C
= 25 C
= 40 C
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
e
PEMB30; PUMB30
= 0 A;
1
(1)
(2)
(3)
Min
-
-
-
-
30
-
1.54
-
10
Typ
-
-
-
-
-
-
2.2
-
I
© NXP B.V. 2009. All rights reserved.
C
(mA)
006aaa692
Max
-
2.86
3
100
1
50
100
150
10
2
Unit
nA
nA
mV
k
pF
4 of 10
A
A