PDTA143TE T/R NXP Semiconductors, PDTA143TE T/R Datasheet - Page 2

Digital Transistors PNP W/RES 50V

PDTA143TE T/R

Manufacturer Part Number
PDTA143TE T/R
Description
Digital Transistors PNP W/RES 50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA143TE T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
SOT-416-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTA143TE,115
NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 04
PDTA143TE
PDTA143TEF
PDTA143TK
PDTA143TM
PDTA143TS
PDTA143TT
PDTA143TU
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
open
PARAMETER
TA143T
*42
*45
E6
39
10
45
(1)
(1)
PDTA143T series
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TM
PDTC143TS
PDTC143TT
PDTC143TU
4.7
NPN COMPLEMENT
TYP.
Product data sheet
−50
−100
MAX.
V
mA
UNIT

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