PUMD4 T/R NXP Semiconductors, PUMD4 T/R Datasheet - Page 4

• Manufacturer Part Number: PUMD4 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PUMD4 T/R

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PUMD4,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 10
Per transistor
R
Per device
R
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
R1
C
SYMBOL
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
th j-a
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input resistor
collector capacitance
SOT363
SOT666
SOT363
SOT666
TR1 (NPN)
TR2 (PNP)
PARAMETER
PARAMETER
V
V
V
V
V
I
C
E
CB
CE
CE
EB
CE
= i
= 10 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
4
CONDITIONS
C
C
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
CB
B
E
B
B
= 0
= 1 mA
amb
amb
= 0.5 mA
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
CONDITIONS
≤ 25 °C
≤ 25 °C
j
= 150 °C
−
−
−
−
200
−
7
−
−
MIN.
VALUE
PEMD4; PUMD4
625
625
416
416
−
−
−
−
−
−
10
−
−
TYP.
Product data sheet
100
1
50
100
−
150
13
2.5
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
kΩ
pF
pF
UNIT