PDTA115EU T/R NXP Semiconductors, PDTA115EU T/R Datasheet - Page 5

Digital Transistors PNP W/RES 50V

PDTA115EU T/R

Manufacturer Part Number
PDTA115EU T/R
Description
Digital Transistors PNP W/RES 50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA115EU T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
100 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
20 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PDTA115EU,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Jul 30
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
th(j-a)
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
V
V
V
T
V
V
I
I
I
I
f = 1 MHz
C
C
C
E
j
CB
CE
CE
EB
CE
= 150 °C
= i
= −5 mA; I
= −100 μA; V
= −1 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0 A; V
5
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
amb
C
B
C
CONDITIONS
CE
≤ 25 °C
E
B
B
= −0.25 mA
CB
= 0 A
= −5 mA
CE
= 0 A
= 0 A
= 0 A;
= −0.3 V
= −10 V;
= −5 V
80
−3
70
0.8
MIN.
VALUE
PDTA115E series
500
250
625
500
833
500
500
−1.2
−1.6
100
1
TYP.
Product data sheet
−100
−1
−50
−50
−150
−0.5
130
1.2
3
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
pF
UNIT

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