PUMD6 T/R NXP Semiconductors, PUMD6 T/R Datasheet - Page 3

Digital Transistors TRNS DOUBL RET TAPE7

PUMD6 T/R

Manufacturer Part Number
PUMD6 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD6 T/R

Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PUMD6,115
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 07
PEMD6
PUMD6
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
stg
j
amb
CBO
CEO
EBO
tot
tot
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
NUMBER
SYMBOL
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
SOT363
SOT666
SOT363
SOT666
NAME
PARAMETER
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
3
amb
amb
DESCRIPTION
PACKAGE
≤ 25 °C; note 1
≤ 25 °C; note 1
CONDITIONS
PEMD6; PUMD6
−65
−65
MIN.
Product data sheet
50
50
5
100
100
200
200
+150
150
+150
300
300
MAX.
VERSION
SOT666
SOT363
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT

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