NSBA123JDXV6T5 ON Semiconductor, NSBA123JDXV6T5 Datasheet - Page 4

• Manufacturer Part Number: NSBA123JDXV6T5
• Description: Digital Transistors 100mA 50V Dual PNP
• Manufacturer: ON Semiconductor

Specifications of NSBA123JDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: - 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
1000
0.01
100
100
0.1
300
250
200
150
100
10
10
50
1
0
1
−50
0
Figure 5. Output Current versus Input Voltage
ALL NSBA114EDXV6T1 SERIES DEVICES
Figure 1. Derating Curve − ALL DEVICES
1
75°C
2
T
A
Figure 3. DC Current Gain
, AMBIENT TEMPERATURE (°C)
I
0
C
V
, COLLECTOR CURRENT (mA)
in
T
3
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
R
, INPUT VOLTAGE (VOLTS)
A
25°C
qJA
= −25°C
4
= 490°C/W
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
10
50
5
6
V
O
7
= 5 V
100
8
V
T
CE
A
= 75°C
= 10 V
http://onsemi.com
9
−25°C
25°C
100
10
150
4
100
0.1
10
0.01
1
4
3
2
1
0
0.1
0
0
1
Figure 6. Input Voltage versus Output Current
TYPICAL ELECTRICAL CHARACTERISTICS
0
V
O
I
= 0.2 V
C
/I
B
= 10
10
10
Figure 4. Output Capacitance
V
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
Figure 2. V
, COLLECTOR CURRENT (mA)
20
— NSBA114EDXV6T1
I
C
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
T
30
30
A
T
versus I
= −25°C
A
75°C
75°C
= −25°C
f = 1 MHz
l
T
40
E
C
40
A
25°C
40
= 0 V
= 25°C
25°C
50
50
50