NSBA123JDXV6T5 ON Semiconductor, NSBA123JDXV6T5 Datasheet - Page 6

• Manufacturer Part Number: NSBA123JDXV6T5
• Description: Digital Transistors 100mA 50V Dual PNP
• Manufacturer: ON Semiconductor

Specifications of NSBA123JDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: - 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
B
= 10
Figure 14. Output Capacitance
10
V
Figure 12. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1
20
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CE(sat)
20
100
T
0.1
10
A
1
= −25°C
0
Figure 16. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
I
= −25°C
C
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
6
75°C
25°C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 15. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 13. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
−25°C
8
25°C
25°C
9
−25°C
100
10