BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 4
BAS45A,113
Manufacturer Part Number
BAS45A,113
Description
Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
Manufacturer
NXP Semiconductors
Datasheet
1.BAS45A113.pdf
(8 pages)
Specifications of BAS45A,113
Product
Switching Diodes
Peak Reverse Voltage
125 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
1500 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.001 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
SOD-68
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934031240113 BAS45A T/R
NXP Semiconductors
GRAPHICAL DATA
1996 Mar 13
handbook, halfpage
handbook, full pagewidth
Low-leakage diode
Device mounted on a printed-circuit board without metallization pad.
Fig.2
Fig.4
Based on square wave currents;T
(mA)
I FSM
I F
(A)
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient temperature.
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
j
= 25 °C prior to surge.
10
T amb (
o
C)
MBG522
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
0.5
10
3
(1)
1.0
t p (μs)
(2)
Product data sheet
(3)
V F (V)
BAS45A
MBG523
MBG704
1.5
10
4