PDZ5.6B,115 NXP Semiconductors, PDZ5.6B,115 Datasheet - Page 3

• Manufacturer Part Number: PDZ5.6B,115
• Description: DIODE ZENER 5.6V 200MW SOD323
• Manufacturer: NXP Semiconductors

Specifications of PDZ5.6B,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Zener (nom) (vz): 5.6V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 1µA @ 2.5V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (max) (zzt): 50 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 5.605 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 1.9 mV / K
• Power Dissipation: 400 mW
• Maximum Reverse Leakage Current: 1 uA
• Maximum Zener Impedance: 50 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3848-2; 934054853115; PDZ5.6B T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
2004 Mar 22
I
I
P
T
T
R
R
F
ZSM
stg
j
tot
Voltage regulator diodes
th(j-s)
th(j-a)
SYMBOL
SYMBOL
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
t
T
T
see Fig.2
p
amb
amb
= 100 μs; square wave;
= 25 °C prior to surge
= 25 °C; note 1;
CONDITIONS
note 1
CONDITIONS
−
−
−65
−
MIN.
VALUE
130
340
PDZ-B series
see Table 2
200
400
+150
150
Product data sheet
MAX.
UNIT
K/W
K/W
mA
mW
°C
°C
UNIT