PDZ4.7B,135 NXP Semiconductors, PDZ4.7B,135 Datasheet - Page 6

• Manufacturer Part Number: PDZ4.7B,135
• Description: DIODE VREG 1.0V 400MW SOD-323
• Manufacturer: NXP Semiconductors

Specifications of PDZ4.7B,135

• Voltage - Zener (nom) (vz): 4.7V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (max) (zzt): 90 Ohm
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Operating Temperature: -65°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054851135

NXP Semiconductors
GRAPHICAL DATA
2004 Mar 22
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
PDZ2.4B to PDZ4.3B.
T
Fig.4
(mW)
j
P tot
S Z
= 25 °C to 150 °C.
500
400
300
200
100
−1
−2
−3
0
0
0
0
Temperature coefficient as a function of
working current; typical values.
Fig.2 Power derating curve.
50
20
100
4.3
40
150
3.9
2.4
2.7
3.3
I Z (mA)
T amb (°C)
3.6
MGL273
MBK245
3.0
200
60
6
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.3
PDZ4.7B to PDZ12B.
T
Fig.5
j
j
S Z
(mA)
= 25 °C.
= 25 °C to 150 °C.
I F
300
200
100
10
−5
0
5
0
0.6
0
Forward current as a function of forward
voltage; typical values.
Temperature coefficient as a function of
working current; typical values.
4
8
0.8
9.1
8.2
7.5
6.8
12
11
10
12
PDZ-B series
6.2
5.6
5.1
4.7
V F (V)
Product data sheet
16
I Z (mA)
MBG781
MGL274
20
1