PZU3.9B2,115 NXP Semiconductors, PZU3.9B2,115 Datasheet - Page 7
![DIODE ZENER 3.9V 310MW SOD323F](/photos/5/26/52649/568-sc-90-_sod323f_sml.jpg)
PZU3.9B2,115
Manufacturer Part Number
PZU3.9B2,115
Description
DIODE ZENER 3.9V 310MW SOD323F
Manufacturer
NXP Semiconductors
Datasheet
1.PZU3.3B115.pdf
(12 pages)
Specifications of PZU3.9B2,115
Package / Case
SC-90, SOD-323F
Voltage - Zener (nom) (vz)
3.9V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
3µA @ 1V
Tolerance
±2%
Power - Max
310mW
Impedance (max) (zzt)
90 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
3.985 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
- 2.5 mV / K
Power Dissipation
550 mW
Maximum Reverse Leakage Current
3 uA
Maximum Zener Impedance
90 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3906-2
934059815115
PZU3.9B2 T/R
934059815115
PZU3.9B2 T/R
NXP Semiconductors
PZUXB_SER_2
Product data sheet
Fig 1.
Fig 3.
(mV/K)
(mA)
S
I
F
300
200
100
Z
10
−5
0
5
0
0.6
T
Forward current as a function of forward
voltage; typical values
0
PZU4.7B to PZU12B
T
Temperature coefficient as a function of
working current; typical values
j
j
= 25 °C
= 25 °C to 150 °C
4
8
0.8
9.1
8.2
7.5
6.8
12
11
10
12
6.2
5.6
5.1
4.7
16
I
V
Z
mbg781
F
(mA)
mgl274
(V)
Rev. 02 — 15 November 2009
20
1
Fig 2.
Fig 4.
(mV/K)
(mW)
P
S
tot
Z
400
300
200
100
−1
−2
−3
0
0
0
PZU2.4B to PZU4.3B
T
Temperature coefficient as a function of
working current; typical values
FR4 PCB, standard footprint
Power derating curve
Single Zener diodes in a SOD323F package
0
j
= 25 °C to 150 °C
50
20
100
PZUxB series
4.3
40
150
3.9
2.4
2.7
© NXP B.V. 2009. All rights reserved.
3.3
I
Z
T
3.6
amb
(mA)
006aaa687
mgl273
3.0
(°C)
200
60
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