RB541XNTR Rohm Semiconductor, RB541XNTR Datasheet

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RB541XNTR

Manufacturer Part Number
RB541XNTR
Description
DIODE SCHOTTKY 30V 0.1A EMD3
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RB541XNTR

Voltage - Forward (vf) (max) @ If
530mV @ 100mA
Current - Reverse Leakage @ Vr
10µA @ 10V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
-
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RB541XNTRTR
RB541XN | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.
http://www.rohm.com/products/discrete/diode/schottky_barrier/rb541xn/print.html
[ Product description ]
ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant,
suitable for PC,mobile phone and various portable electronics.
• Small, power mold type.
• Low VF type, highly reliable.
Copyright © 1997-2011 ROHM CO.,LTD.
Repetitive peak reverse voltage V
Reverse voltage(DC) V
Average rectified forward current I
Forward current surge peak I
Junction temperature Tj(ºC)
Storage temperature Tstg(ºC)
Schottky Barrier Diodes
RB541XN
Features
Product specifications
Rated parameters
Absolute maximum ratings (Ta=25ºC)
R
(V)
FSM
(A)
RM
O
(A)
Standard value
-40 to +125
125
0.1
30
1 60Hz/1cyc
-
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Conditions
Outline
2.0x1.25(t=0.9)
Dimensions
Equivalent circuit
diagram
3/21/2011
1

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