BSM150GB120DN2 Infineon Technologies, BSM150GB120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Modules 1200V 150A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM150GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Ic (max): 150.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 150 GB 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
10
120
C
ns
80
60
40
20
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
50
50
100
100
GE
GE
150
150
= ± 15 V, R
= ± 15 V, R
200
200
j
j
= 125°C
= 125°C
250
250
300
300
G
G
tdoff
tdon
tr
tf
Eon
Eoff
= 5.6
= 5.6
A
I
A
I
C
C
400
400
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
120
ns
80
60
40
20
G
CE
CE
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
10
10
20
20
GE
GE
= ± 15 V, I
= ± 15 V, I
30
30
j
j
= 125°C
= 125°C
40
40
C
C
= 150 A
= 150 A
Oct-21-1997
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
60
60