BSM100GAL120DLCK Infineon Technologies, BSM100GAL120DLCK Datasheet - Page 3

• Manufacturer Part Number: BSM100GAL120DLCK
• Description: IGBT Modules 1200V 100A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of BSM100GAL120DLCK

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 205 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
3
#
#
W
,
b
7
#
PU
# C # # `
% #
W
7 8
#
7 8
< =
=
#
#
#
#
#
S
8 D
#
S
#
8
#
?D # =
# #
# #
S
s
# $
+
=
D
#
$
2
3
=
#
! #
!
s
2
2
=
C
BSM100GAL120DLCK
!
! 7
#
S
M $2 ( ) P82 ( 0 # !
c9FE>Q ( 0 ?BV#_ X B cdTQFEQ ( 0 ?BV#_ X
%- ( )*+2
?
?
$
$
=
=
H #
) #
!
B
S
S
H
)
2
2
U
U
$
#
B
B
# +
# +
B
B
#
#
B
3
#
#
#! S
#! S
=
#
#
B 3
B 3
7
7
2
2
+
+
t
t
M--qr..q
%&' 6F^
,j/kl
M>J-e
%&' 5g
WE-.
+%3
%E>d
<
# !
G
G
2
2)
7 mno
p
0G2
0 2
0H
+
2 )
2 )
2)
!
# C!
H2
0)
0 )
0 )
)2
##
##
#O
t#
t#
*+
*+
*+
B?
,
P