BSM100GB170DN2 Infineon Technologies, BSM100GB170DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM100GB170DN2
• Description: IGBT Modules 1700V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB170DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 3.4 V
• Continuous Collector Current At 25 C: 145 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Ic (max): 100.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Cpuls
BSM 100 GB 170 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Cpuls
parameter: V
V
GE
GE
I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0.0
0
di/dt = 1000A/µs
Gate
CE
200 400 600 800 1000 1200 1400
0.2
C puls
)
GE
)
,
3000A/µs
5000A/µs
0.4
= ± 15 V, t
T
= 100 A
j
= 150°C
0.6
800 V
0.8
p
1.0
1 ms, L < 25 nH
1.2
1.4 µC 1.7
1200 V
Q
V
Gate
V
CE
1800
6
I
Typ. capacitances
C = f (V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
di/dt = 1000A/µs
° allowed numbers of
° time between short
short circuit: <1000
circuit: >1s
)
200 400 600 800 1000 1200 1400
) , T
5
GE
GE
3000A/µs
5000A/µs
j
= ± 15 V, t
= 150°C
= 0, f = 1 MHz
10
15
20
p
10 µs, L < 25 nH
25
30
Oct-27-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1800
40