FF100R12YT3 Infineon Technologies, FF100R12YT3 Datasheet - Page 5

• Manufacturer Part Number: FF100R12YT3
• Description: IGBT Modules IGBT INVERTER 1200V
• Manufacturer: Infineon Technologies

Specifications of FF100R12YT3

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 140 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 100.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EasyDUAL 2

Technische Information / technical information
IGBT-Module
IGBT-modules
$
$
"43 ) UMAW1 "4[[ ) UMAW
"43 ) UMAW1 "4[[ ) UMAW
,A. ) X * ,1 2- )
,A. ) X * ,1 2- )
$
$
2- ) U,-.W
2- ) U,-.W
,A. ) X * ,1 MA4[[ ) 1 O1 &'( )
,A. ) X * ,1 MA4[[ ) 1 O1 &'( )
$
$
"43 ) UMAW1 "4[[ ) UMAW
"43 ) UMAW1 "4[[ ) UMAW
,A. ) X * ,1 2- )
,A. ) X * ,1 2- )
$
$
2- ) U,-.W
2- ) U,-.W
,A. ) X * ,1 MA4[[ ) 1 O1 &'( )
,A. ) X * ,1 MA4[[ ) 1 O1 &'( )
>
>
>
>
250
200
150
100
40
35
30
25
20
15
10
50
5
0
0
%
%
%
%
0
0
M
M
M
M
200
>E
>E
>E
>E
10
2= & @
2= & @
2= & @
2= & @
2= & 2
2= & 2
2= & 2
2= & 2
"431 &'( )
"4[[1 &'( )
2-1
2-1
7
7
7
7
400
20
71 ,-. )
71 ,-. )
71 ,-. )
71 ,-. )
%
%
%
%
600
30
*+
*+
,-. p,r
MA pOr
U
U
U
U
U
U
U
U
2= &
2= &
2= &
2= &
800
40
2= & @ UM $|7W
2= & @ UM $|7W
2= & @ UM $|7W
2= & @ UM $|7W
,
,
,
,
*+
*+
*+
*+
FF100R12YT3
W
W
W
W
W
W
W
W
1000 1200 1400
50
UM $|7W
UM $|7W
UM $|7W
UM $|7W
60
70
5
&
&
&
&
{?Jae ) U W
{?Jae ) U W
{?Jae ) U W
{?Jae ) U W
0
0
0
0
2f ) U,fW
2f ) U,fW
2f ) U,fW
2f ) U,fW
>
>
>
>
0,01
200
180
160
140
120
100
0,1
80
60
40
20
1
0,001
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
@E # >
@E # >
@E # >
@E # >
#
#
#
#
{?Jae 2= &
&'( ) *+
&'( )
#
#
#
#
0,01
Np!C@r
Np r
0
0
0
0
*+
1
1
2= &
2= &
2= &
2= &
@
@
@
@
,f p,r
2= & @
2= & @
2= & @
2= & @
H
*
0,1
Vorläufige Daten
preliminary data
p r
1
1
*
6*
U
U
U
U
Z
U
U
U
U
1 II
1 *
1
W
W
W
W
6
1 HI
1
W
W
W
W
10