FD800R33KF2C Infineon Technologies, FD800R33KF2C Datasheet - Page 3

• Manufacturer Part Number: FD800R33KF2C
• Description: IGBT Modules 3300V 800A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of FD800R33KF2C

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 3300 V
• Collector-emitter Saturation Voltage: 3.4 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 190 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Modulinduktivität: IGBT (Zweig 1+2 parallel): 12nH; Diode (Zweig 3): 25nH
stray inductance module: IGBT (arm 1+2 parallel): 12nH; diode (arm 3): 25nH
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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