FD800R33KL2C-K_B5 Infineon Technologies, FD800R33KL2C-K_B5 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
FD800R33KL2C-K_B5
Manufacturer Part Number
FD800R33KL2C-K_B5
Description
IGBT Modules N-CH 3.3KV 1.5KA
Manufacturer
Infineon Technologies
Datasheet
1.FD800R33KL2C-K_B5.pdf
(8 pages)
Specifications of FD800R33KL2C-K_B5
Configuration
Dual
Collector- Emitter Voltage Vceo Max
3300 V
Continuous Collector Current At 25 C
1500 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHV190
Ic (max)
800.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Low Loss
Housing
IHV 190 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FD800R33KL2C-K_B5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
8
0
0*
8
=
3h
P
0
M
7
3
c
>
E
"
"
$
$
>
AF
$ AF
T$
>
$
$
$
"
"
$
>
$
>
1 `
1
$
>
$
8
$
$
FD800R33KL2C-K_B5
$
$
"
+: '
3g '
3g '
3g '
+: ' 2
+B- ' 2( +
3g '
+: ' 2
+B- ' 2( +
3g '
+: ' 2
+B- ' 2( +
d9HG?Q ' 2 ADU _ W D
9 ' 2
%& ' ()*
%& '
%& ' 2 ()*
0
0
+1 9 ' 2
()*
71 +B- '
71 +B- '
71
71
71
D
!
+
+
+
gD
gD
gD
'
'
'
+
+
1 %& ' 2 ()*
deSQHGQ ' 2 ADU _ W
2
7DL
7DL
7DL
%& ' ()*
%& ' 2 ()*
%& ' ()*
%& ' 2 ()*
%& ' ()*
%& ' 2 ()*
%& ' ()*
%& ' 2 ()*
Vorläufige Daten
preliminary data
g54 6N4
M?J,f
+::;
8:i;
M?Jb,
3g:;
#SQj
3:;
+g
KS
3h
3g
!
//
//
2<
2
2 (
2
2
2 1
(
@<
(
1<
1((
/
1
!
! ! !
(1(
E!
"7h
"A
L*
L*
L
D"A
D"A
+
7
7
+
+
7
7
[
[