BSM300GB60DLC Infineon Technologies, BSM300GB60DLC Datasheet - Page 7

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BSM300GB60DLC

Manufacturer Part Number
BSM300GB60DLC
Description
IGBT Modules 600V 300A DUAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM300GB60DLC

Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
375 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.25 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
300.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM300GB60DLC
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM300GB60DLC
Manufacturer:
SIEMENS
Quantity:
530
Part Number:
BSM300GB60DLC
Quantity:
50
Company:
Part Number:
BSM300GB60DLC
Quantity:
350
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
700
600
500
400
300
200
100
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
IC,Modul
IC,Chip
0,01
BSM 300 GB 60 DLC
200
0,0018
0,0487
74,0
4,2
1
7 (8)
300
0,1
V
0,0240
0,0169
52,4
71,0
CE
400
2
t [sec]
[V]
Z
V
thJC
GE
= +15V, R
= f (t)
500
0,0651
0,1069
35,2
44,6
G,off
3
1
= 3,3
Zth:IGBT
Zth:Diode
T
600
vj
= 125°C
0,6626
0,9115
20,4
8,1
4
BSM 300 GB 60 DLC S1
700
10
2000-02-08

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