FF800R17KE3_B2 Infineon Technologies, FF800R17KE3_B2 Datasheet - Page 3
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FF800R17KE3_B2
Manufacturer Part Number
FF800R17KE3_B2
Description
IGBT Modules N-CH 1.7KV 1.2KA
Manufacturer
Infineon Technologies
Datasheet
1.FF800R17KE3_B2.pdf
(8 pages)
Specifications of FF800R17KE3_B2
Configuration
Dual Dual Collector Dual Emitter
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
1200 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Ic (max)
800.0 A
Vce(sat) (typ)
2.0 V
Technology
IGBT3
Housing
IHM 130 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FF800R17KE3_B2FF800R17KE3-B2
Manufacturer:
ST
Quantity:
70 000
Company:
Part Number:
FF800R17KE3_B2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FF800R17KE3_B2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FF800R17KE3_B2
Quantity:
55
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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