FZ1200R17KF6C_B2 Infineon Technologies, FZ1200R17KF6C_B2 Datasheet - Page 5

• Manufacturer Part Number: FZ1200R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 1.95KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R17KF6C_B2

• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 1950 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
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Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
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0,5
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FZ 1200 R 17 KF6C B2
Tj = 25°C
Tj = 125°C
Tvj = 25°C
Tvj = 125°C
1,0
8
5(8)
V
V
GE
F
1,5
[V]
9
[V]
10
I
C
2,0
V
CE
= f (V
= 20V
11
GE
)
2,5
vorläufige Daten
preliminary data
I
F
12
= f (V
F
)
FZ1200R17KF6CB2_V.xls
3,0
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