FF150R12YT3 Infineon Technologies, FF150R12YT3 Datasheet - Page 6

• Manufacturer Part Number: FF150R12YT3
• Description: IGBT Modules N-CH 1.2KV 200A
• Manufacturer: Infineon Technologies

Specifications of FF150R12YT3

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EasyDUAL 2

Technische Information / technical information
IGBT-Module
IGBT-modules
%
%
$TRh * V3fX
$TRh * V3fX
NA54 * 2L P2 -./ *
NA54 * 2L P2 -./ *
'
'
{?Jae * V X
{?Jae * V X
%
%
$TRh * V3fX
$TRh * V3fX
NA54 * 2L P2 -./ *
NA54 * 2L P2 -./ *
'
'
{?Jae * V X
{?Jae * V X
>
>
>
>
0,01
0,1
20
18
16
14
12
10
8
6
4
2
0
1
0,001
&
&
&
&
0
@E
@E
@E
@E
1
1
1
1
50
$TRh2 '() *
{?Jae 1
0,01
>
>
>
>
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Op#C@r
Op r
100
-
-
-
-
2
2
+,
3f p r
1
1
" V
" V
" V
" V
150
1
1
+
0,1
V
V
V
V
L
p r
2
2
I
+
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FF150R12YT3
X
X
X
X
200
X
X
X
X
<
2 + +
2 +
1
250
L
"
"
"
"
"
2< HH
2
300
10
6
%
%
%
%
$TRh * VNAX
$TRh * VNAX
$TRh * VNAX
$TRh * VNAX
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N * V'X
N * V'X
N * V'X
>
>
100000
>
>
10000
1000
!
100
20
15
10
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'
'
5
0
&
&
&
&
0
0
2 -./ *
2 -./ *
2 -./ *
2 -./ *
20
3
1
1
1
1
$TRh2 '() *
N?}z
40
6
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@
@
@
-
-
-
-
60
9
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V
V
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NA pPr
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" V
" V
" V
V
V
V
V
12
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V
V
V
V
Vorläufige Daten
preliminary data
X
X
X
X
100 120 140 160
15
X
X
X
X
X
X
X
X
X
X
X
X
18
21
24