FF150R12MS4G Infineon Technologies, FF150R12MS4G Datasheet - Page 2

• Manufacturer Part Number: FF150R12MS4G
• Description: IGBT Modules N-CH 1.2KV 225A
• Manufacturer: Infineon Technologies

Specifications of FF150R12MS4G

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 225 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo D
• Ic (max): 150.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoDUAL™ 3

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
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