FS25R12YT3 Infineon Technologies, FS25R12YT3 Datasheet - Page 4

• Manufacturer Part Number: FS25R12YT3
• Description: IGBT Modules N-CH 1.2KV 40A
• Manufacturer: Infineon Technologies

Specifications of FS25R12YT3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 40 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3 Fast
• Housing: EasyPACK 2

Technische Information / technical information
IGBT-Module
IGBT-modules
6
6
1+ ' U*+,W
1+ ' U*+,W
*A, ' . *
*A, ' . *
c
c
1+ ' U*A,W
1+ ' U*A,W
*+, '
*+, '
6
6
1+ ' U*+,W
1+ ' U*+,W
*A, ' . *
*A, ' . *
c
c
1+ ' U*A,W
1+ ' U*A,W
*+, '
*+, '
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0,0
5
*
*
*
*
0,3
6
0,6
$%& '
$%& ' .
$%& '
$%& ' .
1<a$ @
1<a$ @
1<a$ @
1<a$ @
1<a$
1<a$
1<a$
1<a$
0,9
7
1<a$
1<a$
1<a$
1<a$
()
()
()
()
1,2
1<a$ @
1<a$ @
1<a$ @
1<a$ @
8
*A, q*s
*+, q*s
1,5
U
U
U
U
9
1,8
U
U
U
U
U
U
U
U
FS25R12YT3
2,1
10
W
W
W
W
W
W
W
W
W
W
W
W
U
U
U
U
2,4
11
2,7
W
W
W
W
3,0
12
4
6
6
1+ ' U*+,W
1+ ' U*+,W
$%& ' .
$%& ' .
#
#
!32 ' U1+W9 !3ZZ ' U1+W
!32 ' U1+W9 !3ZZ ' U1+W
*A, ' X. *9 A32 '
*A, ' X. *9 A32 '
$%& ' .
$%& ' .
6
6
1+ ' U*+,W
1+ ' U*+,W
$%& ' .
$%& ' .
#
#
!32 ' U1+W9 !3ZZ ' U1+W
!32 ' U1+W9 !3ZZ ' U1+W
*A, ' X. *9 A32 '
*A, ' X. *9 A32 '
$%& ' .
$%& ' .
=
=
=
=
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
50
45
40
35
30
25
20
15
10
5
0
0,0
0
()
()
()
()
()
()
()
()
0,5
5
1<a$ @
1<a$ @
1<a$ @
1<a$ @
1,0
1<a$
1<a$
1<a$
1<a$
10
*A, ' .H*
*A, ' . *
*A, ' . *
*A, ' . *
*A, ' ..*
*A, ' H*
!32
!3ZZ
1<a$
1<a$
1<a$
1<a$
1,5
15
M9 A3ZZ '
M9 A3ZZ '
M9 A3ZZ '
M9 A3ZZ '
1<a$ @
1<a$ @
1<a$ @
1<a$ @
Vorläufige Daten
preliminary data
2,0
20
*+, q*s
1+ q6s
U
U
U
U
2,5
U
U
U
U
25
U
U
U
U
3,0
30
M9 *+, ' ?
M9 *+, ' ?
M9 *+, ' ?
M9 *+, ' ?
W
W
W
W
W
W
W
W
3,5
35
U
U
U
U
W
W
W
W
4,0
40
W
W
W
W
4,5
45
*9
*9
*9
*9
5,0
50