FZ800R17KF6C_B2 Infineon Technologies

FZ800R17KF6C_B2

Manufacturer Part Number

FZ800R17KF6C_B2

Description

IGBT Modules N-CH 1.7KV 1.3KA

Manufacturer

Infineon Technologies

Specifications of FZ800R17KF6C_B2

Configuration

Dual Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

1700 V

Collector-emitter Saturation Voltage

2.6 V

Continuous Collector Current At 25 C

1300 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

6.6 KW

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

IHM

Ic (max)

800.0 A

Vce(sat) (typ)

2.7 V

Technology

IGBT2 Low Loss

Housing

IHM 130 mm

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ800R17KF6C_B2

Manufacturer:

EUPEC/Infineon

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FZ800R17KF6C_B2

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FZ800R17KF6C_B2

Quantity:

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