FF800R12KF4 Infineon Technologies, FF800R12KF4 Datasheet - Page 2

• Manufacturer Part Number: FF800R12KF4
• Description: IGBT Modules 1200V 800A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF800R12KF4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 800 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Periodischer Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Isolations-Prüfspannung
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (ohmsche Last)
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
Einschaltverlustenergie pro Puls
Abschaltverlustenergie pro Puls
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaßspannung
Rückstromspitze
Sperrverzögerungsladung
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
Anzugsdrehmoment f. mech. Befestigung mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque
Gewicht
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
t
v
R
t
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
FF 800 R 12 KF 4
fg
vj
L
GF
= 125°C
= ±15 V
= 10 µs
= R
GR
= 1,2
collector-emitter voltage
DC-collector current
repetitive peak collctor current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
insulation test voltage
collector-emitter saturation voltage
gate threshold voltage
input capacity
collector-emitter cut-off current
gate leakage current
gate leakage current
turn-on time (restistive load)
storage time (inductive load)
fall time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
forward voltage
peak reverse recovery current
recovered charge
thermal resistance, junction to case
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
internal insulation
weight
V
v
i
i
CMK1
CMK2
CEM
CC
= 750 V
= 900 V
5000 A
4000 A
t
t
t
RMS, f=50 Hz, t= 1 min.
i
i
i
f
v
v
v
v
i
v
v
i
v
v
i
v
v
i
V
i
V
i
i
i
v
v
i
v
v
Transistor / transistor, DC
Transistor,DC,pro Zweig/per arm
Diode, DC, pro Modul/per module
Diode, DC, pro Zweig/per arm
pro Modul / per Module
pro Zweit / per arm
terminals M6 / tolerance ±15%
terminals M4 / tolerance +5% / -10%
terminals M8
p
C
p
C
C
C
O
C
C
C
C
C
F
F
F
F
CE
CE
CE
CE
LF
LF
LF
LF
LF
LF
RM
RM
RM
RM
=1 ms
=1ms
L
L
=800A, v
=800A, v
=800A, -di
=800A, -di
=25°C, Transistor /transistor
=800A, v
=800A, v
=32mA, v
=1MHz,T
=800A,v
=800A,v
=800A,v
= 800 A, v
= 800 A, v
=15V, T
=15V, T
=15V, T
=15V, T
=15V, T
=15V, T
= ±15 V, R
= ±15 V, R
=1200V, v
=1200V, v
=0V, v
=0V, v
=600V, v
=600V, v
=600V, v
=600V, v
GE
EG
CE
CE
CE
GE
GE
GE
GE
vj
vj
vj
vj
vj
vj
vj
CE
=20V, T
=20V, T
=25°C,v
=600V,v
= 25°C
= 125°C
=600V,v
= 25°C
= 125°C
=600V,v
= 25°C
= 125°C
F
F
EG
EG
EG
EG
CE
CE
=15V, T
=15V, T
=0V, t
=0V, t
/dt=4kA/µs
/dt=4kA/µs
GE
GE
=v
G
G
= 10V, T
= 10V, T
= 10V, T
= 10V, T
= 600 V, L
= 600 V, L
=0V, T
=0V, T
= 1,2
= 1,2
GE
CEM
, T
vj
vj
=25°C
=125°C
vj
vj
CE
LF
LF
LF
= V
vj
vj
vj
=25°C
=25°C
=25°C
=125°C
=25°C
=±15V,R
=±15V,R
=±15V,R
=25V, v
vj
vj
, T
, T
=25°C
=125°C
vj
vj
vj
vj
CES
= 25°C
= 125°C
= 25°C
= 125°C
S
S
vj
vj
= 70 nH
= 70 nH
= 125°C
= 125°C
- 20nH x |di
GE
G
G
G
=0V
=1,2
=1,2
=1,2
c
/dt|
V
I
I
P
V
I
I
V
v
v
C
i
i
i
t
t
t
E
E
v
I
Q
R
R
T
T
T
M1
M2
G
C
CRM
F
FRM
CES
GES
EGS
RM
on
s
f
CE sat
GE(th)
F
CES
tot
GE
ISOL
on
off
vj max
c op
stg
ies
thJC
thCK
r
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0,10
0,15
130
120
250
400
typ.
2,7
3,4
5,5
0,7
0,8
0,9
2,2
2,0
55
16
80
26
90
1
-
-
-40...+125 °C
-40...+125 °C
typ. 0,008 °C/W
typ. 0,016 °C/W
ca. 1500 g
0,0125 °C/W
0,025 °C/W
0,021 °C/W
0,042 °C/W
8...10 Nm
AI
1200 V
1600 A
5000 W
1600 A
max.
± 20 V
800 A
800 A
400 nA
400 nA
150 °C
2
2,5 kV
3,2 V
6,5 V
2,7 V
2,5 V
O
4 V
3 Nm
2 Nm
3
- nF
- mA
- mA
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
- A
- A
- µAs
- µAs